Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks

N. Von Bandel; Joseph P. Bebe Manga Lobe; M. Garcia; A. Larrue; Y. Robert; E. Vinet; M. Lecomte; O. Drisse; O. Parillaud; M. Krakowski

doi:10.1117/12.2076750

10 March 2015 Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks

N. Von Bandel, Joseph P. Bebe Manga Lobe, M. Garcia, A. Larrue, Y. Robert, E. Vinet, M. Lecomte, O. Drisse, O. Parillaud, M. Krakowski

Author Affiliations +

Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93820L (2015) https://doi.org/10.1117/12.2076750
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Time-frequency applications are in need of high accuracy and high stability clocks. Compact industrial Cesium atomic clocks optically pumped is a promising area that could satisfy these demands. However, the stability of these clocks relies, among others, on the performances of laser diodes that are used for atomic pumping. This issue has led the III-V Lab to commit to the European Euripides-LAMA project that aims to provide competitive compact optical Cesium clocks for earth applications. This work will provide key experience for further space technology qualification. We are in charge of the design, fabrication and reliability of Distributed-Feedback diodes (DFB) at 894nm (D1 line of Cesium) and 852nm (D2 line). The use of D1 line for pumping will provide simplified clock architecture compared to D2 line pumping thanks to simpler atomic transitions and larger spectral separation between lines in the 894nm case. Also, D1 line pumping overcomes the issue of unpumped “dark states” that occur with D2 line. The modules should provide narrow linewidth (<1MHz), very good reliability in time and, crucially, be insensitive to optical feedback. The development of the 894nm wavelength is grounded on our previous results for 852nm DFB. Thus, we show our first results from Al-free active region with InGaAsP quantum well broad-area lasers (100μm width, with lengths ranging from 2mm to 4mm), for further DFB operation at 894nm. We obtained low internal losses below 2cm^-1, the external differential efficiency is 0.49W/A with uncoated facets and a low threshold current density of 190A/cm², for 2mm lasers at 20°C.

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N. Von Bandel, Joseph P. Bebe Manga Lobe, M. Garcia, A. Larrue, Y. Robert, E. Vinet, M. Lecomte, O. Drisse, O. Parillaud, and M. Krakowski "Al-free active region laser diodes at 894 nm for compact Cesium atomic clocks", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93820L (10 March 2015); https://doi.org/10.1117/12.2076750

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KEYWORDS

Semiconductor lasers

Cesium

Clocks

Atomic clocks

Reliability

Etching

Quantum wells

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