Paper
13 March 2015 High-power UV-B LEDs with long lifetime
Jens Rass, Tim Kolbe, Neysha Lobo-Ploch, Tim Wernicke, Frank Mehnke, Christian Kuhn, Johannes Enslin, Martin Guttmann, Christoph Reich, Anna Mogilatenko, Johannes Glaab, Christoph Stoelmacker, Mickael Lapeyrade, Sven Einfeldt, Markus Weyers, Michael Kneissl
Author Affiliations +
Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631K (2015) https://doi.org/10.1117/12.2077426
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
UV light emitters in the UV-B spectral range between 280 nm and 320 nm are of great interest for applications such as phototherapy, gas sensing, plant growth lighting, and UV curing. In this paper we present high power UV-B LEDs grown by MOVPE on sapphire substrates. By optimizing the heterostructure design, growth parameters and processing technologies, significant progress was achieved with respect to internal efficiency, injection efficiency and light extraction. LED chips emitting at 310 nm with maximum output powers of up to 18 mW have been realized. Lifetime measurements show approximately 20% decrease in emission power after 1,000 operating hours at 100 mA and 5 mW output power and less than 30% after 3,500 hours of operation, thus indicating an L50 lifetime beyond 10,000 hours.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jens Rass, Tim Kolbe, Neysha Lobo-Ploch, Tim Wernicke, Frank Mehnke, Christian Kuhn, Johannes Enslin, Martin Guttmann, Christoph Reich, Anna Mogilatenko, Johannes Glaab, Christoph Stoelmacker, Mickael Lapeyrade, Sven Einfeldt, Markus Weyers, and Michael Kneissl "High-power UV-B LEDs with long lifetime", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631K (13 March 2015); https://doi.org/10.1117/12.2077426
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Cited by 38 scholarly publications.
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KEYWORDS
Light emitting diodes

Electron beam lithography

Aluminum nitride

Aluminum

Polarization

Luminescence

External quantum efficiency

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