High-efficiency UV LEDs on sapphire

Max Shatalov; Rakesh Jain; Alex Dobrinsky; Wenhong Sun; Yuri Bilenko; Jinwei Yang; Michael Shur; Remis Gaska

doi:10.1117/12.2079874

13 March 2015 High-efficiency UV LEDs on sapphire

Max Shatalov, Rakesh Jain, Alex Dobrinsky, Wenhong Sun, Yuri Bilenko, Jinwei Yang, Michael Shur, Remis Gaska

Proceedings Volume 9363, Gallium Nitride Materials and Devices X; 93631M (2015) https://doi.org/10.1117/12.2079874
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

We discuss factors affecting the external quantum efficiency, droop and reliability of AlGaN deep ultraviolet (DUV) light emitting diodes (LED) grown on sapphire substrates. Improvement of LED performance is achieved by suppression of the nonradiative recombination in epitaxial structures with dislocation density reduced to below 5x10⁸ cm^-2, transparent LED structure design and optimized UV encapsulation for enhanced light extraction. Relatively low light extraction efficiency remains to be a key factor limiting LED output power and quantum efficiency.

Citation Download Citation

Max Shatalov, Rakesh Jain, Alex Dobrinsky, Wenhong Sun, Yuri Bilenko, Jinwei Yang, Michael Shur, and Remis Gaska "High-efficiency UV LEDs on sapphire", Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93631M (13 March 2015); https://doi.org/10.1117/12.2079874

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