The patterning center of excellence (CoE): an evolving lithographic enablement model

Warren Montgomery; Jun Sung Chun; Michael Liehr; Michael Tittnich

doi:10.1117/12.2175733

13 March 2015 The patterning center of excellence (CoE): an evolving lithographic enablement model

Warren Montgomery, Jun Sung Chun, Michael Liehr, Michael Tittnich

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94221L (2015) https://doi.org/10.1117/12.2175733
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

As EUV lithography moves toward high-volume manufacturing (HVM), a key need for the lithography materials makers is access to EUV photons and imaging. The SEMATECH Resist Materials Development Center (RMDC) provided a solution path by enabling the Resist and Materials companies to work together (using SUNY Polytechnic Institute’s Colleges of Nanoscale Science and Engineering (SUNY Poly CNSE) -based exposure systems), in a consortium fashion, in order to address the need for EUV photons. Thousands of wafers have been processed by the RMDC (leveraging the SUNY Poly CNSE/SEMATECH MET, SUNY Poly CNSE Alpha Demo Tool (ADT) and the SEMATECH Lawrence Berkeley MET) allowing many of the questions associated with EUV materials development to be answered. In this regard the activities associated with the RMDC are continuing. As the major Integrated Device Manufacturers (IDMs) have continued to purchase EUV scanners, Materials companies must now provide scanner based test data that characterizes the lithography materials they are producing. SUNY Poly CNSE and SEMATECH have partnered to evolve the RMDC into “The Patterning Center of Excellence (CoE)”. The new CoE leverages the capability of the SUNY Poly CNSE-based full field ASML 3300 EUV scanner and combines that capability with EUV Microexposure (MET) systems resident in the SEMATECH RMDC to create an integrated lithography model which will allow materials companies to advance materials development in ways not previously possible.

Citation Download Citation

Warren Montgomery, Jun Sung Chun, Michael Liehr, and Michael Tittnich "The patterning center of excellence (CoE): an evolving lithographic enablement model", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221L (13 March 2015); https://doi.org/10.1117/12.2175733

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