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Proceedings Article

EUV lithography optics for sub-9nm resolution

[+] Author Affiliations
Bernhard Kneer, Sascha Migura, Winfried Kaiser, Jens Timo Neumann

Carl Zeiss SMT GmbH (Germany)

Jan van Schoot

ASML Netherlands B.V. (Netherlands)

Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221G (March 16, 2015); doi:10.1117/12.2175488
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From Conference Volume 9422

  • Extreme Ultraviolet (EUV) Lithography VI
  • Obert R. Wood; Eric M. Panning
  • San Jose, California, United States | February 22, 2015

abstract

EUV lithography for resolution below 9 nm requires the numerical aperture of the projection optics to be significantly larger than 0.45. A configuration of 4x magnification, full field size and 6’’ reticle is not feasible anymore. The increased chief ray angle and higher NA at reticle lead to non-acceptable shadowing effects, which can only be controlled by increasing the magnification, hence reducing the system productivity. We demonstrate that the best compromise in imaging, productivity and field split is a so-called anamorphic magnification and a half field of 26 x 16.5 mm². We discuss the optical solutions for anamorphic high-NA lithography. © (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Bernhard Kneer ; Sascha Migura ; Winfried Kaiser ; Jens Timo Neumann and Jan van Schoot
" EUV lithography optics for sub-9nm resolution ", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221G (March 16, 2015); doi:10.1117/12.2175488; http://dx.doi.org/10.1117/12.2175488


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