Through silicon via developments for silicon photomultiplier sensors

C. Jackson; L. Wall; Kevin O'Neill; B. McGarvey; D. Herbert

doi:10.1117/12.2076893

16 March 2015 Through silicon via developments for silicon photomultiplier sensors

C. Jackson, L. Wall, Kevin O'Neill, B. McGarvey, D. Herbert

Proceedings Volume 9359, Optical Components and Materials XII; 93591A (2015) https://doi.org/10.1117/12.2076893
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Packaging can have a significant impact on the performance characteristics of Silicon Photomultipliers (SiPM) sensors as well as having an impact on reliability and yield. To provide the highest performance possible, SensL have recently developed and tested a surface mount, through silicon via (TSV) package that provides high array fill factor, high photon detection efficiency (PDE) and magnetic resonance imaging (MRI) system compatibility. The PDE of TSV packaged sensors will be shown to be the highest when compared to traditional SiPM package types. In addition the PDE in the UV and blue region will be shown to approach that of unprotected bare die. Additionally, the TSV package has minimal deadspace outside of the active area which will be shown to allow close packing when used in a sensor array. It will be shown that arrays of TSV sensors have the highest fill factor currently possible when creating arrays from singulated die. Additionally, it will be shown that TSV parts are non-magnetic and results of images taken with the TSV SiPM in a 3 Tesla magnetic resonance imaging (MRI) system will be shown to have no impact on the MRI system.

Citation Download Citation

C. Jackson, L. Wall, Kevin O'Neill, B. McGarvey, and D. Herbert "Through silicon via developments for silicon photomultiplier sensors", Proc. SPIE 9359, Optical Components and Materials XII, 93591A (16 March 2015); https://doi.org/10.1117/12.2076893

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