Directed self-assembly of topcoat-free, integration-friendly high-X block copolymers

Eri Hirahara; Margareta Paunescu; Orest Polishchuk; EunJeong Jeong; Edward Ng; Jianhui Shan; Jihoon Kim; SungEun Hong; Durairaj Baskaran; Guanyang Lin; Ankit Vora; Melia Tjio; Noel Arellano; Charles T. Rettner; Elizabeth Lofano; Chi-Chun Liu; Hsinyu Tsai; Anindarupa Chunder; Khanh Nguyen; Alexander M. Friz; Amy N. Bowers; Srinivasan Balakrishnan; Joy Y. Cheng; Daniel P. Sanders

doi:10.1117/12.2087398

20 March 2015 Directed self-assembly of topcoat-free, integration-friendly high-_x block copolymers

Eri Hirahara, Margareta Paunescu, Orest Polishchuk, EunJeong Jeong, Edward Ng, Jianhui Shan, Jihoon Kim, SungEun Hong, Durairaj Baskaran, Guanyang Lin, Ankit Vora, Melia Tjio, Noel Arellano, Charles T. Rettner, Elizabeth Lofano, Chi-Chun Liu, Hsinyu Tsai, Anindarupa Chunder, Khanh Nguyen, Alexander M. Friz, Amy N. Bowers, Srinivasan Balakrishnan, Joy Y. Cheng, Daniel P. Sanders

Author Affiliations +

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 94250P (2015) https://doi.org/10.1117/12.2087398
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

To extend scaling beyond poly(styrene-b-methyl methacrylate) (PS-b-PMMA) for directed self-assembly (DSA), high quality organic high-_x block copolymers (HC series) were developed and applied to implementation of sub-10 nm L/S DSA. Lamellae-forming block copolymers (BCPs) of the HC series showed the ability to form vertically oriented polymer domains conveniently with the in-house PS-r-PMMA underlayers (AZEMBLY EXP NLD series) without the use of an additional topcoat. The orientation control was achieved with low bake temperatures (≤200 °C) and short bake times (≤5 min). Also, these process-friendly materials are compatible with existing 193i-based graphoepitaxy and chemoepitaxy DSA schemes. In addition, it is notable that 8.5 nm organic lamellae domains were amenable to pattern development by simple dry etch techniques. These successful demonstrations of high-_x L/S DSA on 193i-defined guiding patterns and pattern development can offer a feasible route to access sub-10 nm node patterning technology.

Citation Download Citation

Eri Hirahara, Margareta Paunescu, Orest Polishchuk, EunJeong Jeong, Edward Ng, Jianhui Shan, Jihoon Kim, SungEun Hong, Durairaj Baskaran, Guanyang Lin, Ankit Vora, Melia Tjio, Noel Arellano, Charles T. Rettner, Elizabeth Lofano, Chi-Chun Liu, Hsinyu Tsai, Anindarupa Chunder, Khanh Nguyen, Alexander M. Friz, Amy N. Bowers, Srinivasan Balakrishnan, Joy Y. Cheng, and Daniel P. Sanders "Directed self-assembly of topcoat-free, integration-friendly high-_x block copolymers", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 94250P (20 March 2015); https://doi.org/10.1117/12.2087398

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available