Research on mechanical vibration impacts of GaAs photocathode photoemission performance

Feng Shi; Hong-chang Cheng; Xiao-feng Bai; Lei Yan

doi:10.1117/12.2178699

13 April 2015 Research on mechanical vibration impacts of GaAs photocathode photoemission performance

Feng Shi, Hong-chang Cheng, Xiao-feng Bai, Lei Yan

Proceedings Volume 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II; 95220G (2015) https://doi.org/10.1117/12.2178699
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held August-October 2014, 2014, China, China

Abstract

The GaAs photocathode has widely been used in optoelectronic devices such as image intensifiers, photomultiplier tubes, but these devices is inevitable to withstand a variety of mechanical vibration. In order to study the mechanical vibration impact on the photoemission performance of GaAs photocathode, GaAs photocathode image intensifier is researched in this paper. The spectral response of the GaAs photocathode before and after 5~55Hz scan frequency, 14Hz, 33Hz, 52Hz stay frequency, 5～60Hz scan frequency mechanical vibration respectively was tested, then the parameter of photocathode was calculated by MATLAB software according to quantum efficiency formula, the quantum efficiency curve were fitted. The results show that surface escape probability is increased after photocathode is subjected to mechanical vibration, so that its photoemission performance will be improved. We think this phenomenon is due to the GaAs photocathode surface Cs-O reconstruction. This finding provided a new method to enhance the photoemission performance of photocathode.

Citation Download Citation

Feng Shi, Hong-chang Cheng, Xiao-feng Bai, and Lei Yan "Research on mechanical vibration impacts of GaAs photocathode photoemission performance", Proc. SPIE 9522, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 95220G (13 April 2015); https://doi.org/10.1117/12.2178699

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KEYWORDS

Gallium arsenide

Image intensifiers

Quantum efficiency

Diffusion

Absorption

Optoelectronic devices

Cesium

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