Radiative dark current in optically thin III-V photovoltaic devices

Roger E. Welser; Ashok K. Sood; Sudersena Rao Tatavarti; Andree Wibowo; David M. Wilt; Alex Howard

doi:10.1117/12.2185571

16 April 2015 Radiative dark current in optically thin III-V photovoltaic devices

Roger E. Welser, Ashok K. Sood, Sudersena Rao Tatavarti, Andree Wibowo, David M. Wilt, Alex Howard

Proceedings Volume 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV; 93580Q (2015) https://doi.org/10.1117/12.2185571
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

High-voltage InGaAs quantum well solar cells have been demonstrated in a thin-film format, utilizing structures that employ advanced band gap engineering to suppress non-radiative recombination and expose the limiting radiative component of the diode current. In particular, multiple InGaAs quantum well structures fabricated via epitaxial lift-off exhibit one-sun open circuit voltages as high as 1.05 V. The dark diode characteristics of these high-voltage III-V photovoltaic devices are compared to the radiative current calculated from the measured external quantum efficiency using a generalized detailed balance model specifically adapted for optically-thin absorber structures. The fitted n=1 component of the diode current is found to match the calculated radiative dark current when assuming negligible photon recycling, suggesting this thin-film multiple quantum well structure is operating close to the radiative limit.

Citation Download Citation

Roger E. Welser, Ashok K. Sood, Sudersena Rao Tatavarti, Andree Wibowo, David M. Wilt, and Alex Howard "Radiative dark current in optically thin III-V photovoltaic devices", Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580Q (16 April 2015); https://doi.org/10.1117/12.2185571

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