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27 April 2015 Future and present technologies of solid state lighting (Presentation Video)
Shuji Nakamura
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Proceedings Volume 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX; 93831M (2015) https://doi.org/10.1117/12.2197203
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
Blue nitride-based LEDs have been grown hetero-epitaxially on sapphire, SiC and Si substrates. Homo-epitaxial growth of LEDs grown on GaN substrate is getting popular to improve the reliability and to increase the power density per chip. Laser lighting also would be a promising lighting technology to improve the power density per chip in the future.

View presentation video on SPIE’s Digital Library: http://dx.doi.org/10.1117/12.2197203.4078395318001
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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Shuji Nakamura "Future and present technologies of solid state lighting (Presentation Video)", Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 93831M (27 April 2015); https://doi.org/10.1117/12.2197203
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KEYWORDS
Light emitting diodes
Solid state lighting
Video
Light sources and illumination
Silicon carbide
Gallium nitride
Patterned sapphire substrate
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