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23–25 February 2015 San Jose, California, United States Cosponsored by Lam Research Corporation (United States) The papers included in this volume were part of the technical conference cited on the cover and title page. Papers were selected and subject to review by the editors and conference program committee. Some conference presentations may not be available for publication. The papers published in these proceedings reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon. Please use the following format to cite material from this book: Author(s), “Title of Paper,” in Advanced Etch Technology for Nanopatterning IV, edited by Qinghuang Lin, Sebastian U. Engelmann, Proceedings of SPIE Vol. 9428 (SPIE, Bellingham, WA, 2015) Article CID Number. ISSN: 0277-786X ISBN: 9781628415308 Published by SPIE P.O. Box 10, Bellingham, Washington 98227-0010 USA Telephone +1 360 676 3290 (Pacific Time) • Fax +1 360 647 1445 Copyright © 2015, Society of Photo-Optical Instrumentation Engineers. Copying of material in this book for internal or personal use, or for the internal or personal use of specific clients, beyond the fair use provisions granted by the U.S. Copyright Law is authorized by SPIE subject to payment of copying fees. The Transactional Reporting Service base fee for this volume is $18.00 per article (or portion thereof), which should be paid directly to the Copyright Clearance Center (CCC), 222 Rosewood Drive, Danvers, MA 01923. Payment may also be made electronically through CCC Online at copyright.com. Other copying for republication, resale, advertising or promotion, or any form of systematic or multiple reproduction of any material in this book is prohibited except with permission in writing from the publisher. The CCC fee code is 0277-786X/15/$18.00. Printed in the United States of America. Publication of record for individual papers is online in the SPIE Digital Library. Paper Numbering: Proceedings of SPIE follow an e-First publication model, with papers published first online and then in print. Papers are published as they are submitted and meet publication criteria. A unique citation identifier (CID) number is assigned to each article at the time of the first publication. Utilization of CIDs allows articles to be fully citable as soon as they are published online, and connects the same identifier to all online, print, and electronic versions of the publication. SPIE uses a six-digit CID article numbering system in which:
The CID Number appears on each page of the manuscript. The complete citation is used on the first page, and an abbreviated version on subsequent pages. AuthorsNumbers in the index correspond to the last two digits of the six-digit citation identifier (CID) article numbering system used in Proceedings of SPIE. The first four digits reflect the volume number. Base 36 numbering is employed for the last two digits and indicates the order of articles within the volume. Numbers start with 00, 01, 02, 03, 04, 05, 06, 07, 08, 09, 0A, 0B...0Z, followed by 10-1Z, 20-2Z, etc. Altamirano-Sánchez, E., 0C Argoud, M., 0D Arnold, John, 0A, 0F Arnold, Michael S., 0T Azuma, T., 0S Barnola, S., 0B, 0D Beique, Genevieve, 0A, 0F Biolsi, Peter, 0G Boemmels, J., 0W Boettcher, Monika, 0V Bos, S., 0D Braithwaite, N. St. J., 0C Brouri, M., 0W Chevalier, X., 0D Chiba, Yuki, 0F Choi, Jonathan W., 0T Claveau, G., 0D Cooke, Mike, 0V Darnon, M., 0B Das, Sanjana, 0G De Gendt, S., 0C de Marneffe, Jean-François, 0C, 0J Demuynck, S., 0W De Schepper, P., 0C DeVillers, Anton, 0G Do, Thuy, 0I Dupuy, E., 0B el Otell, Ziad, 0C, 0J Farrell, Richard, 0G Feurprier, Yannick, 0F Fouchier, M., 0B Franke, Elliott, 0G Friddle, Phil, 0A Gharbi, A., 0D Goodyear, Andy, 0V Gopalan, Padma, 0T Goss, Michael, 0A Gottscho, Richard A., 09 Grampeix, H., 0B Hamieh, Bassem, 0A, 0F Han, Eungnak, 0T Han, Qiu-Hua, 0X Hansel, Leander, 0J Hara, Arisa, 0H Hashimoto, Kohji, 07 Huang, Ruixuan, 0X Ito, Kiyohito, 0G Joubert, O., 0B Jung, Sunwook, 0I Jung, Taewoo, 06 Kamarthy, Gowri, 09 Kanai, H., 0S Kanarik, Keren J., 09 Kasahara, Y., 0S Kawamonzen, Y., 0S Kihara, N., 0S Kim, Myungwoong, 0T Kim, Yongjin, 06 Kimura, Yoshie, 09 Ko, Akiteru, 0G Kobayashi, K., 0S Kodera, K., 0S Koike, Kyohei, 0H Kolb, Tristan, 0J Kubota, H., 0S Kubota, Shinji, 0N Kubota, Tomihiro, 0N Kumar, Kaushik, 0F, 0G Kunnen, E., 0W Kwak, Nohjung, 06 Kyoh, Suigen, 07 Labelle, Catherine, 0A, 0F Labonte, Andre, 0A, 0F Lapeyre, C., 0D Lee, Byoungseok, 06 Lee, Changwoo, 0A Lee, Sangdo, 06 Leobandung, E., 05 Lill, Thorsten, 09 Liu, Chinchao, 0Y Liu, Eric, 0G Lutker-Lee, Katie, 0F Marinov, D., 0C Marks, Jeffrey, 09 Matsumoto, Hiroie, 0F Matsumoto, Takanori, 07 Matsushita, Takaya, 07 Meng, Xiao-Ying, 0X Metz, Andrew, 0F Mignot, Yann, 0A, 0F Minegishi, S., 0S Miyagi, K., 0S Miyama, Ryo, 0N Mohanty, Nihar, 0G Monget, C., 0D Moyama, Kazuki, 0N Mucci, John, 0A Mukai, Hidefumi, 07 Nagabhirava, Bhaskar, 0A Natori, Sakurako, 0H Navarro, C., 0D Nawa, Kenjiro, 0G Neuber, Christian, 0J Nicolet, C., 0D Nomura, S., 0S Nozawa, Toshihisa, 0N Okabe, Noriaki, 0H O’Meara, Dave, 0G Oyama, Kenichi, 0H Pargon, E., 0B Park, Sungki, 06 Pimenta-Barros, P., 0B, 0D Posseme, N., 0D Pradelles, J., 0B Raley, Angelique, 0G Ranjan, Alok, 0G, 0O Rassoul, Nouradine, 0A Rastogi, Vinayak, 0F Reichl, Gary, 0Y Ringk, Andreas, 0J Ryckaert, J., 0W Safron, Nathaniel S., 0T Samukawa, Seiji, 0N Sarrazin, A., 0D Sato, H., 0S Scheer, Steven, 0G Schmitz, Stefan, 0A Seino, Y., 0S Servin, I., 0D Shen, Meihua, 09 Sherpa, Sonam, 0O Shiraishi, M., 0S Smith, Jeffrey, 0G Stolberg, Ines, 0V Sturtevant, John, 0I Tallaron, C., 0D Tan, Samantha, 09 Tiron, R., 0D Tobana, T., 0S Vahedi, Vahid, 09 Ventzek, Peter, 0O Versluijs, J., 0W Wang, Mingmei, 0G, 0O Wang, Peng, 0A Wu, Jian, 0A Yaegashi, Hidetami, 0H Yamato, Masatoshi, 0H Yamauchi, Shohei, 0H Yang, Richard, 0A Zhang, Hai-Yang, 0X Conference CommitteeSymposium Chair Symposium Co-chair Conference Chair Conference Co-chair Conference Program Committee
Session Chairs
IntroductionThis proceedings volume features accepted papers from the SPIE Conference on Advanced Etch Technology for Nanopatterning IV (The SPIE Etch Conference) held as part of the International Symposium on Advanced Lithography, 22–26 February 2015 in San Jose, California. These proceedings papers cover the latest advances in the wide field of etch and nanopatterning technology and offer a glimpse of the state of the art of this important field of semiconductor technology. This year’s conference continued the fine tradition of wide international representation and attracted many researcher from related fields. For the first time, our conference lasted two full days and was divided into eight sessions, all of which continued to garner tremendous interest among conference attendees.
This year, the conference hosted two well-attended joint sessions on Patterning Materials and Etch as well as Materials and Etch in Emerging Technologies with the Advances in Patterning Materials and Processes Conference. The Overview Session, where some of the most important fundamental issues being faced in the world of nanopatterning and etch were discussed, drew very big crowds. We hope that this proceedings volume will prove valuable to the many patterning scientists and engineers working in the fast-moving semiconductor industry. We also hope that it will serve as a useful reference for those who are interested in nanofabrication, micro- and nano-fluidics, micro- and nanophotonics, Micro-Electro-Mechanical Systems (MEMS), BioMEMS, organic electronics, advanced packaging, as well as bio-chips. We thank the authors, particularly the invited speakers, for their valuable contributions to this conference and this proceedings volume. The SPIE Etch Conference is highly regarded among the worldwide patterning community due to the high quality of presentations and proceedings papers. We also thank members of the organizing committee for their dedication and hard work to ensure the high quality of this conference. We are also grateful to LAM Research Corporation for their generous financial support. Finally, we extend our sincere thanks to the SPIE staff for their tireless efforts and their meticulous organizational skills in assembling and publishing this proceedings volume and helping make this year’s SPIE Etch Conference a success. Qinghuang Lin Sebastian U. Engelmann |
