Paper
21 May 2015 High temperature stability of ScxAl1-xN (x=0.27) thin films
Author Affiliations +
Abstract
The stability of piezoelectric scandium aluminium nitride (ScxAl1-xN) thin films with x= 27% was investigated after post deposition annealings up to 1000°C. The ScxAl1-xN thin films targeted for applications in micro-electromechanical systems (MEMS) were deposited close to room-temperature applying DC magnetron sputtering. Varying deposition parameters yielded films with different microstructural properties and piezoelectric constants. Upon annealing, the crystalline quality of thin films with c-axis orientation increased, as found via characterization techniques such as X-ray diffractometry and fourier transform infrared absorbance measurements. Additionally, piezoelectric constants after annealing steps up to 1000°C are reported as obtained via a Berlincourt measurement principle. Furthermore, modifications in chemical composition during temperature loads up to 1000°C were recorded by thermal effusion measurements.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. M. Mayrhofer, A. Bittner, and U. Schmid "High temperature stability of ScxAl1-xN (x=0.27) thin films", Proc. SPIE 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems, 95171C (21 May 2015); https://doi.org/10.1117/12.2178503
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Argon

Thin films

Annealing

Crystals

Aluminum nitride

Temperature metrology

Absorbance

Back to Top