Paper
9 July 2015 ENDEAVOUR to understand EUV buried defect printability
Kazunori Seki, Takeshi Isogawa, Masayuki Kagawa, Shinji Akima, Yutaka Kodera, Karen Badger, Zhengqing John Qi, Mark Lawliss, Jed Rankin, Ravi Bonam
Author Affiliations +
Abstract
NAP-PD (Native Acting Phase – Programmed Defects), otherwise known as buried program defects, with attributes very similar to native defects, are successfully fabricated using a high accuracy overlay technique. The defect detectability and visibility are analyzed with conventional phase contrast blank inspection @193 nm wavelength, pattern inspection @193 nm wavelength and SEM. The mask is also printed on wafer and printability is discussed. Finally, the inspection sensitivity and wafer printability are compared, leading to the observation that the current blank and pattern inspection sensitivity is not enough to detect all of the printable defects.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazunori Seki, Takeshi Isogawa, Masayuki Kagawa, Shinji Akima, Yutaka Kodera, Karen Badger, Zhengqing John Qi, Mark Lawliss, Jed Rankin, and Ravi Bonam "ENDEAVOUR to understand EUV buried defect printability", Proc. SPIE 9658, Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII, 96580G (9 July 2015); https://doi.org/10.1117/12.2197763
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CITATIONS
Cited by 4 scholarly publications and 2 patents.
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KEYWORDS
Inspection

Semiconducting wafers

Photomasks

Scanning electron microscopy

Defect detection

Phase contrast

Extreme ultraviolet

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