Investigation on optoelectronic characteristics of porous silicon/TiO2/CH3NH3PbI3/graphene heterostructure light-emitting diodes prepared by spin-coating

Wun-Wei Lin; Jia-Ren Wu; Yoichiro Nakanishi; Lung-Chien Chen

doi:10.1117/12.2187890

20 August 2015 Investigation on optoelectronic characteristics of porous silicon/TiO₂/CH₃NH₃PbI₃/graphene heterostructure light-emitting diodes prepared by spin-coating

Wun-Wei Lin, Jia-Ren Wu, Yoichiro Nakanishi, Lung-Chien Chen

Author Affiliations +

Proceedings Volume 9558, Nanostructured Thin Films VIII; 95580M (2015) https://doi.org/10.1117/12.2187890
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States

Abstract

This work reports the optoelectronic characteristics of the graphene/MAPbI₃/TiO₂/Si heterostructure and graphene/Pb₂/porous Si heterostructure for light-emitting devices with low cost. The XRD diagrams of these two heterostructures show three main peaks at the position of 14.1°, 28.4°, and 31.9°, which correlate with (110), (220), and (310) planes of the MAPbI₃ perovskite phase. The PL spectra of these two heterostructures demonstrated three peaks located at 382, 566, and 766 nm. They are corresponding to the emission of B-B transition of TiO₂, defects in the TiO₂, and B-B transition of MAPbI₃. One peak of the EL spectrum of the graphene/MAPbI₃/TiO₂/porous Si heterostructure operated under the injection current of 10 mA located at around 800 nm was observed.

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Wun-Wei Lin, Jia-Ren Wu, Yoichiro Nakanishi, and Lung-Chien Chen "Investigation on optoelectronic characteristics of porous silicon/TiO₂/CH₃NH₃PbI₃/graphene heterostructure light-emitting diodes prepared by spin-coating", Proc. SPIE 9558, Nanostructured Thin Films VIII, 95580M (20 August 2015); https://doi.org/10.1117/12.2187890

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