Challenges in constructing EUV metrology tools to  qualify the EUV masks for HVM implementation

David C. Houser; Feng Dong; Chami N. Perera; Rupert C. C. Perera

doi:10.1117/12.2196727

4 September 2015 Challenges in constructing EUV metrology tools to qualify the EUV masks for HVM implementation

David C. Houser, Feng Dong, Chami N. Perera, Rupert C. C. Perera

Proceedings Volume 9661, 31st European Mask and Lithography Conference; 96610K (2015) https://doi.org/10.1117/12.2196727
Event: 31st European Mask and Lithography Conference, 2015, Eindhoven, Netherlands

Abstract

Extreme Ultraviolet (EUV) Lithography is still viewed as the most promising approach for maintaining the pace of Moore's Law. Recent real achievements in EUV Lithography (EUVL) have encouraged semiconductor manufacturers to reconsider their road maps. One of the principal challenges in the ongoing EUVL implementation for high volume manufacturing (HVM) is the availability of necessary clean at wavelength metrology tools. EUV Tech is the world's leading manufacturer of at-wavelength EUV metrology equipment. Founded in 1997, EUV Tech has pioneered the development of several stand-alone inspection, metrology, and calibration tools for EUV lithographic applications that can be operated in a clean room environment on the floor of a fab. In this paper, EUV Tech’s R&D program to minimize particle adders in our EUV Reflectometer along with the ongoing effort to enhance the reflectivity and wavelength, precision and accuracy required to qualify the EUV masks for HVM. In addition to preliminary results from our stand alone EUV Scatterometer developed to characterize the phase roughness of a EUV mask and the introduction of EUV Tech’s Pellicle test suite for testing EUV pellicles.

Citation Download Citation

David C. Houser, Feng Dong, Chami N. Perera, and Rupert C. C. Perera "Challenges in constructing EUV metrology tools to qualify the EUV masks for HVM implementation", Proc. SPIE 9661, 31st European Mask and Lithography Conference, 96610K (4 September 2015); https://doi.org/10.1117/12.2196727

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