Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD

Daniel Seidlitz; M. K. I. Senevirathna; Y. Abate; A. Hoffmann; N. Dietz

doi:10.1117/12.2188612

8 September 2015 Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD

Daniel Seidlitz, M. K. I. Senevirathna, Y. Abate, A. Hoffmann, N. Dietz

Proceedings Volume 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems; 95710P (2015) https://doi.org/10.1117/12.2188612
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

This paper presents optoelectronic and structural layer properties of InN and InGaN epilayers grown on sapphire templates by Migration-Enhanced Plasma Assisted Metal Organic Chemical Vapor Deposition (MEPA-MOCVD). Real-time characterization techniques have been applied during the growth process to gain insight of the plasma-assisted decomposition of the nitrogen precursor and associated growth surface processes. Analyzed Plasma Emission Spectroscopy (PES) and UV Absorption Spectroscopy (UVAS) provide detection and concentrations of plasma generated active species (N*/NH*/NHx*). Various precursors have been used to assess the nitrogen-active fragments that are directed from the hollow cathode plasma tube to the growth surface. The in-situ diagnostics results are supplemented with ex-situ materials structures investigation results of nanoscale structures using Scanning Near-field Optical Microscopy (SNOM). The structural properties have been analyzed by Raman spectroscopy and Fourier transform infrared (FTIR) reflectance. The Optoelectronic and optical properties were extracted by modeling the FTIR reflectance (e.g. free carrier concentration, high frequency dielectric constant, mobility) and optical absorption spectroscopy. The correlation and comparison between the in-situ metrology results with the ex-situ nano-structural and optoelectronic layer properties provides insides into the growth mechanism on how plasma-activated nitrogen-fragments can be utilized as nitrogen precursor for group III-nitride growth. The here assessed growth process parameter focus on the temporal precursor exposure of the growth surface, the reactor pressure, substrate temperature and their effects of the properties of the InN and InGaN epilayers.

Citation Download Citation

Daniel Seidlitz, M. K. I. Senevirathna, Y. Abate, A. Hoffmann, and N. Dietz "Optoelectronic and structural properties of InGaN nanostructures grown by plasma-assisted MOCVD", Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710P (8 September 2015); https://doi.org/10.1117/12.2188612

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