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5 October 2015 Colloidal quantum dot photodetectors (Presentation Recording)
Valerio Adinolfi, Edward H. Sargent
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Proceedings Volume 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications; 955506 (2015) https://doi.org/10.1117/12.2189512
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States
Abstract
Colloidal quantum dots (CQDs) are emerging solution processed materials combining low cost, easy deposition on large and flexible substrates, and bandgap tunability. The latter feature, which allows spectral tuning of the absorption profile of the semiconductor, makes these materials particularly attractive for light detection applications. Lead sulfide (PbS) CQDs, in particular, have shown astonishing performance as a light sensitive material operating at visible and infrared (IR) wavelengths. Early studies of PbS CQDs used as a photosensitive resistor (photoconductor) showed an impressive responsivity - exceeding 1000 A/W - and a detectivity (D*) higher then 10^13 Jones. This impressive D* was preserved in the successive development of the first PbS CQD photodiode, showing the possibility to realize fast - f_3db > 1Mhz - and sensitive IR detectors. Currently, the field is moving toward the development of hybrid devices and phototransitors. PbS CQDs have been combined in field effect transistors (FETs) with graphene and MoS2 channels, showing ultra-high gain (exceeding 10^8 electrons/photons) and high D*. Recently a photo-junction FET (photo-JFET) has been reported that breaks the inherent dark current/gain/bandwidth compromise affecting photoconductive light detectors. With this presentation we offer a broad overview on CQD photodetection highlighting the past achievements, the benefits, the challenges and the prospects for the future research on this field.
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Valerio Adinolfi and Edward H. Sargent "Colloidal quantum dot photodetectors (Presentation Recording)", Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 955506 (5 October 2015); https://doi.org/10.1117/12.2189512
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KEYWORDS
Lead
Field effect transistors
Photodetectors
Quantum dots
Absorption
Infrared radiation
Materials processing
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