The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO2/SiO2 thin-film pairs

S. Papernov; A. A. Kozlov; J. B. Oliver; C. Smith; L. Jensen; D. Ristau; S. Günster; H. Mädebach

doi:10.1117/12.2196654

23 November 2015 The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO₂/SiO₂ thin-film pairs

S. Papernov, A. A. Kozlov, J. B. Oliver, C. Smith, L. Jensen, D. Ristau, S. Günster, H. Mädebach

Author Affiliations +

Proceedings Volume 9632, Laser-Induced Damage in Optical Materials: 2015; 96320B (2015) https://doi.org/10.1117/12.2196654
Event: SPIE Laser Damage, 2015, Boulder, Colorado, United States

Abstract

The role of thin-film interfaces in the near-ultraviolet absorption and pulsed-laser–induced damage was studied for ion-beam–sputtered coatings comprised of HfO₂ and SiO₂ thin-film pairs. To separate contributions from the bulk of the film and from interfacial areas, absorption and damage threshold were measured for a one-wave (355-nm)–thick HfO₂ single-layer film and for a film containing seven narrow HfO₂ layers separated by SiO₂ layers. The seven-layer film was designed to have a total optical thickness of HfO₂ layers equal to one wave at 355 nm and an E-field peak and average intensity similar to a single-layer HfO₂ film. Absorption in both types of films was measured using laser calorimetry and photothermal heterodyne imaging. The results showed a small contribution to total absorption from thinfilm interfaces, as compared to HfO₂ film material. The relevance of obtained absorption data to coating near-ultraviolet, nanosecond-pulse laser damage was verified by measuring the damage threshold and characterizing damage morphology. The results of this study revealed a higher damage resistance in the seven-layer coating as compared to the single-layer HfO₂ film, in agreement with data recently reported for similarly designed electron-beam–deposited coatings. The results are explained through the similarity of interfacial film structure and structure formed during the co-deposition of HfO₂ and SiO₂ materials.

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S. Papernov, A. A. Kozlov, J. B. Oliver, C. Smith, L. Jensen, D. Ristau, S. Günster, and H. Mädebach "The role of film interfaces in near-ultraviolet absorption and pulsed-laser damage in ion-beam-sputtered coatings based on HfO₂/SiO₂ thin-film pairs", Proc. SPIE 9632, Laser-Induced Damage in Optical Materials: 2015, 96320B (23 November 2015); https://doi.org/10.1117/12.2196654

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