Sub-wavelength Si-based plasmonic light emitting tunnel junction

Hasan Goktas; Volker J. Sorger

doi:10.1117/12.2202439

22 December 2015 Sub-wavelength Si-based plasmonic light emitting tunnel junction

Hasan Goktas, Volker J. Sorger

Proceedings Volume 9668, Micro+Nano Materials, Devices, and Systems; 96684L (2015) https://doi.org/10.1117/12.2202439
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2015, Sydney, New South Wales, Australia

Abstract

Here we report the effect a metal grating on the light emission enhancement of a light emitting tunnel junction (LETJ). The device utilizes the finite probability of tunneling electrons to scatter inelastically, i.e. emit a photon over a phonon. Here a Fermi sea was electrically biased against the conduction band of a doped semiconductor. While functional, the external emission efficiency is low due to high absorption from the top metal. Here we experimentally show that introducing a grating to this top metal layer will enhance the emission intensity. Additional simulation results provide inside into the light-coupling process. Our result show a 12 times enhancement.

Citation Download Citation

Hasan Goktas and Volker J. Sorger "Sub-wavelength Si-based plasmonic light emitting tunnel junction", Proc. SPIE 9668, Micro+Nano Materials, Devices, and Systems, 96684L (22 December 2015); https://doi.org/10.1117/12.2202439

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