Heterogeneously grown tunable group-IV laser on silicon

Mantu Hudait; M. Clavel; L. Lester; D. Saladukha; T. Ochalski; F. Murphy-Armando

doi:10.1117/12.2218364

13 February 2016 Heterogeneously grown tunable group-IV laser on silicon

Mantu Hudait, M. Clavel, L. Lester, D. Saladukha, T. Ochalski, F. Murphy-Armando

Proceedings Volume 9755, Quantum Sensing and Nano Electronics and Photonics XIII; 97550Y (2016) https://doi.org/10.1117/12.2218364
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Tunable tensile-strained germanium (epsilon-Ge) thin films on GaAs and heterogeneously integrated on silicon (Si) have been demonstrated using graded III-V buffer architectures grown by molecular beam epitaxy (MBE). epsilon-Ge epilayers with tunable strain from 0% to 1.95% on GaAs and 0% to 1.11% on Si were realized utilizing MBE. The detailed structural, morphological, band alignment and optical properties of these highly tensile-strained Ge materials were characterized to establish a pathway for wavelength-tunable laser emission from 1.55 μm to 2.1 μm. High-resolution X-ray analysis confirmed pseudomorphic epsilon-Ge epitaxy in which the amount of strain varied linearly as a function of indium alloy composition in the InxGa1-xAs buffer. Cross-sectional transmission electron microscopic analysis demonstrated a sharp heterointerface between the epsilon-Ge and the InxGa1-xAs layer and confirmed the strain state of the epsilon-Ge epilayer. Lowtemperature micro-photoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 eV and 0.65 eV demonstrated for the 0.82% and 1.11% epsilon-Ge on Si, respectively. The highly epsilon-Ge exhibited a direct bandgap, and wavelength-tunable emission was observed for all samples on both GaAs and Si. Successful heterogeneous integration of tunable epsilon-Ge quantum wells on Si paves the way for the implementation of monolithic heterogeneous devices on Si.

Citation Download Citation

Mantu Hudait, M. Clavel, L. Lester, D. Saladukha, T. Ochalski, and F. Murphy-Armando "Heterogeneously grown tunable group-IV laser on silicon", Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII, 97550Y (13 February 2016); https://doi.org/10.1117/12.2218364

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KEYWORDS

Silicon

Gallium arsenide

Germanium

Tunable lasers

Semiconductor lasers

X-rays

Quantum wells

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