Reduced-mode (REM) diodes enable high brightness fiber-coupled modules

M. Kanskar; L. Bao; Z. Chen; D. Dawson; M. DeVito; W. Dong; M. Grimshaw; X. Guan; M. Hemenway; K. Kennedy; R. Martinsen; W. Urbanek; S. Zhang

doi:10.1117/12.2214992

4 March 2016 Reduced-mode (REM) diodes enable high brightness fiber-coupled modules

M. Kanskar, L. Bao, Z. Chen, D. Dawson, M. DeVito, W. Dong, M. Grimshaw, X. Guan, M. Hemenway, K. Kennedy, R. Martinsen, W. Urbanek, S. Zhang

Author Affiliations +

Proceedings Volume 9733, High-Power Diode Laser Technology and Applications XIV; 97330D (2016) https://doi.org/10.1117/12.2214992
Event: SPIE LASE, 2016, San Francisco, California, United States

Abstract

There is an increasing demand for high-power, high-brightness diode lasers from 8xx nm to 9xx nm for applications such as fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. The kilowatt CW fiber laser pumping (915 nm - 976 nm), in particular, requires the diode lasers to have both high power and high brightness in order to achieve high-performance and reduced manufacturing costs. This paper presents continued progress in the development of high brightness fiber-coupled product platform, element^TM. Further brightness improvement and power-scaling have been enabled by both the rise in chip brightness as well as the increase in number of chips used to couple into a given numerical aperture. We have developed a new generation of high power broad area laser known as reduced-mode diode (REM-diode) which suppresses many of the higher order modes in the slow axis and reduces divergence up to two times at the same operating conditions. To date, we have achieved slow-axis brightness as high as 4.3 W/mm-mrad for devices with thermal resistance of ~2.5 C/W. As a result, we have achieved >75 watts from a 1×6 element^TMin the 9xx nm spectral range; and 177 watts of peak power from a 2×6 element^TM. We have also improved our optics for fiber-coupling which accommodates 7 emitters per polarization in the same numerical aperture. Using this configuration, we project 200 watts of peak power from a 2×7 element^TM with a reliable product at 176 W of power from 105 μm and 0.15 NA fiber. REM-diodes can also be wavelength stabilized using VBGs. The reliability of REM-diodes are equal or better than broad area lasers (BALs). We present current status on ongoing reliability assessment of chip-on-submount.

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M. Kanskar, L. Bao, Z. Chen, D. Dawson, M. DeVito, W. Dong, M. Grimshaw, X. Guan, M. Hemenway, K. Kennedy, R. Martinsen, W. Urbanek, and S. Zhang "Reduced-mode (REM) diodes enable high brightness fiber-coupled modules", Proc. SPIE 9733, High-Power Diode Laser Technology and Applications XIV, 97330D (4 March 2016); https://doi.org/10.1117/12.2214992

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