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Proceedings Article

Large TE polarized optical gain from AlInN-delta-GaN quantum well for ultraviolet lasers

[+] Author Affiliations
Cheng Liu, Yu Kee Ooi, Jing Zhang

Rochester Institute of Technology (United States)

Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670F (March 7, 2016); doi:10.1117/12.2212923
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From Conference Volume 9767

  • Novel In-Plane Semiconductor Lasers XV
  • Alexey A. Belyanin; Peter M. Smowton
  • San Francisco, California, United States | February 13, 2016

abstract

Ultraviolet (UV) lasers with wavelength (λ) < 300 nm have important applications in free-space communication, water/air purification, and biochemical agent detection. Conventionally, AlGaN quantum wells (QWs) are widely used as active region for UV lasers. However, high-efficiency electrically injected mid-UV lasers with λ ~ 250-300 nm are still very challenging as the corresponding AlGaN QWs suffer from severe band-mixing effect due to the presence of the valence sub-band crossover between the heavy-hole (HH) and crystal-field split off (CH) sub-bands, which would result in very low optical gain in such wavelength regime.

Therefore, in this work, we propose and investigate the use of AlInN material system as an alternative for mid-UV lasers. Nanostructure engineering by the use of AlInN-delta-GaN QW has been performed to enable dominant conduction band – HH sub-band transition as well as optimized electron-hole wave function overlap. The insertion of the ultra-thin delta-GaN layer, which is lattice-matched to Al0.82In0.18N layer, would localize the wave functions strongly toward the center of the active region, leading to large transverse electric (TE) polarized optical gain (gTE) for λ~ 250- 300 nm. From our finding, the use of AlInN-delta-GaN QW resulted in ~ 3-times enhancement in TE-polarized optical gain, in comparison to that of conventional AlGaN QW, for gain media emitting at ~ 255 nm. The peak emission wavelength can be tuned by varying the delta layer thickness while maintaining large TE gain. Specifically, gTE ~ 3700 cm-1 was obtained for λ ~ 280-300 nm, which are very challenging for conventional AlGaN QW active region. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Cheng Liu ; Yu Kee Ooi and Jing Zhang
" Large TE polarized optical gain from AlInN-delta-GaN quantum well for ultraviolet lasers ", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670F (March 7, 2016); doi:10.1117/12.2212923; http://dx.doi.org/10.1117/12.2212923


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