Paper
7 March 2016 Novel approaches to increasing the brightness of broad area lasers
P. Crump, M. Winterfeldt, J. Decker, M. Ekterai, J. Fricke, S. Knigge, A. Maaßdorf, G. Erbert
Author Affiliations +
Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97671L (2016) https://doi.org/10.1117/12.2210951
Event: SPIE OPTO, 2016, San Francisco, California, United States
Abstract
Progress in studies to increase the lateral brightness Blat of broad area lasers is reviewed. Blat=Pout/BPPlat is maximized by developing designs and technology for lowest lateral beam parameter product, BPPlat, at highest optical output power Pout. This can be achieved by limiting the number of guided lateral modes and by improving the beam quality of low-order lateral modes. Important effects to address include process and packaging induced wave-guiding, lateral carrier accumulation and the thermal lens profile. A careful selection of vertical design is also shown to be important, as are advanced techniques to filter out higher order modes.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Crump, M. Winterfeldt, J. Decker, M. Ekterai, J. Fricke, S. Knigge, A. Maaßdorf, and G. Erbert "Novel approaches to increasing the brightness of broad area lasers", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97671L (7 March 2016); https://doi.org/10.1117/12.2210951
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Cited by 6 scholarly publications.
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KEYWORDS
Diffraction

Electronic design automation

Semiconductor lasers

Near field optics

Packaging

Near field

Waveguides

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