Aging behavior, reliability, and failure physics of GaN-based optoelectronic components

Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Carlo De Santi; Marco La Grassa; Matteo Buffolo; Nicola Trivellin; Desiree Monti

doi:10.1117/12.2225128

8 March 2016 Aging behavior, reliability, and failure physics of GaN-based optoelectronic components

Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Carlo De Santi, Marco La Grassa, Matteo Buffolo, Nicola Trivellin, Desiree Monti

Author Affiliations +

Proceedings Volume 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX; 97681E (2016) https://doi.org/10.1117/12.2225128
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

This paper critically reviews the most relevant failure modes and mechanisms of InGaN LEDs for lighting application. At chip level, both the epitaxial heterostructure and the ohmic contacts may be affected. This may result in: (i) the formation of defects within the active region, resulting in the increase of non-radiative recombination and leakage current, (ii) the reduction of the injection efficiency consequent to increased trap-assisted tunneling, (iii) the degradation of contact resistance with increase of forward voltage. Package-related failures – not described in this paper - include (iv) thermally-activated degradation processes, affecting the yellow phosphors, the plastic package or the encapsulating materials and (v) darkening of the Ag package reflective coating, the latter due to chemical reaction with contaminants as Cl or S. In order to enucleate and study the different physical failure mechanisms governing device degradation, single quantum well (SQW) blue LEDs, InGaN laser structures and commercially-available white LEDs to high temperature and/or high current density have been submitted to accelerated testing at high temperature and high current density.

Citation Download Citation

Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Carlo De Santi, Marco La Grassa, Matteo Buffolo, Nicola Trivellin, and Desiree Monti "Aging behavior, reliability, and failure physics of GaN-based optoelectronic components", Proc. SPIE 9768, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XX, 97681E (8 March 2016); https://doi.org/10.1117/12.2225128

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available