Study of design-based e-beam defect inspection for hotspot detection and process window characterization on 10nm logic device

Philippe Leray; Sandip Halder; Paolo Di Lorenzo; Fei Wang; Pengcheng Zhang; Wei Fang; Kevin Liu; Jack Jau

doi:10.1117/12.2218971

21 April 2016 Study of design-based e-beam defect inspection for hotspot detection and process window characterization on 10nm logic device

Philippe Leray, Sandip Halder, Paolo Di Lorenzo, Fei Wang, Pengcheng Zhang, Wei Fang, Kevin Liu, Jack Jau

Author Affiliations +

Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 97780O (2016) https://doi.org/10.1117/12.2218971
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

With the continuous shrink of design rules from 14nm to 10nm to 7nm, conserving process windows in a high volume manufacturing environment is becoming more and more difficult. Masks, scanners, and etch processes have to meet very tight specifications in order to keep defect, CD, as well as overlay within the margins of the process window. In this work, we study a design-based e-beam defect inspection technology for wafer level process window characterization and intra-field defect variability on 10nm logic devices. Due to high resolution, e-beam technology is the natural choice for review and/or detection of subtle pattern deviations, aka defects. The capability of integrating design information (GDS file) with defect detection, dimension measurement of critical structure, and defect classification provides added values for engineers to identify yield limiting systematic defects and to provide feedback to design.

Citation Download Citation

Philippe Leray, Sandip Halder, Paolo Di Lorenzo, Fei Wang, Pengcheng Zhang, Wei Fang, Kevin Liu, and Jack Jau "Study of design-based e-beam defect inspection for hotspot detection and process window characterization on 10nm logic device", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780O (21 April 2016); https://doi.org/10.1117/12.2218971

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