1.5-um quantum dot laser material with high temperature stability of threshold current density and external differential efficiency

S. Banyoudeh; A. Abdollahinia; V. Sichkovskyi; J. P. Reithmaier

doi:10.1117/12.2209085

8 March 2016 1.5μm quantum dot laser material with high temperature stability of threshold current density and external differential efficiency

S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, J. P. Reithmaier

Author Affiliations +

Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97670I (2016) https://doi.org/10.1117/12.2209085
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Self-organized InAs quantum dot (QD) lasers based on InP substrate were grown by means of solid source molecular beam epitaxy (SSMBE). Six InAs QD layers with high dot density and highly uniform dot sizes were used as active medium. Broad area (BA) and ridge waveguide (RWG) lasers with different cavity lengths were processed and characterized. Also the influence of a post-growth rapid thermal annealing (RTA) process on the laser characteristics was investigated. The lasers showed a high modal gain of 12 - 14.5 cm^-1 per dot layer and a threshold current density for infinite cavity length of 120 A/cm² per dot layer. In pulsed operation, as-cleaved BA lasers with a cavity length of 292 μm can be operated up to 120 °C. High characteristic temperature values were obtained with T₀ = 125 K (20 °C to 45 °C) and T0 = 100 K up to 120 °C. The slope efficiency of about 0.28 W/A can be kept constant over a wide operating temperature range of up to 100 °C. Mounted RWG lasers with 388 μm cavity length and operated in pulsed mode showed a maximum output power of 120 mW a slope efficiency of 0.42 W/A at 15 °C. The lasers can be operated at 150 °C with 25 mW output power. These results demonstrate very well the temperature insensitive lasing performance expected in nearly ideal QD lasers due to the high density of states localized at the transition energy, which allow a very robust ground state lasing.

Citation Download Citation

S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, and J. P. Reithmaier "1.5μm quantum dot laser material with high temperature stability of threshold current density and external differential efficiency", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670I (8 March 2016); https://doi.org/10.1117/12.2209085

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available