Free-carrier contribution to all-optical switching in Mie-resonant hydrogenated amorphous silicon nanodisks

Polina P. Vabishchevich; Alexander S. Shorokhov; Maxim R. Shcherbakov; Andrey A. Fedyanin

doi:10.1117/12.2212294

14 March 2016 Free-carrier contribution to all-optical switching in Mie-resonant hydrogenated amorphous silicon nanodisks

Polina P. Vabishchevich, Alexander S. Shorokhov, Maxim R. Shcherbakov, Andrey A. Fedyanin

Author Affiliations +

Proceedings Volume 9756, Photonic and Phononic Properties of Engineered Nanostructures VI; 97560E (2016) https://doi.org/10.1117/12.2212294
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

Conventionally, all-optical switching devices made out from bulk silicon and other semiconductors are limited by free-carrier relaxation time which spans from picoseconds to microseconds. In this work, we discuss the possibility to suppress the undesired long free-carrier relaxation in subwavelength dielectric nanostructures exhibiting localized magnetic Mie resonances. Numerical calculations show the unsymmetrical modification of the transmittance spectra of the nanodisks due the free carriers photo-injection. Such a spectral dependance allows to control temporal response of the nanostructure by varying the laser pulse spectum.

Citation Download Citation

Polina P. Vabishchevich, Alexander S. Shorokhov, Maxim R. Shcherbakov, and Andrey A. Fedyanin "Free-carrier contribution to all-optical switching in Mie-resonant hydrogenated amorphous silicon nanodisks", Proc. SPIE 9756, Photonic and Phononic Properties of Engineered Nanostructures VI, 97560E (14 March 2016); https://doi.org/10.1117/12.2212294

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