In the absence of suitable methods for integrating III-V materials into standard microelectronic fabrication processes, Si has been actively explored as an alternative light emitter for silicon photonics. Although several proposals on how to increase the internal quantum efficiency of interband above bandgap (λ ≤1μm) luminescence in this indirect bandgap material were successful and are becoming fruitful, the luminescence mode is not without pitfalls. These drawbacks are low emission power, temperature quenching, and the need for additional technological steps, like doping by emissive centers or fabrication of quantum-confined structures. Below, we describe an innovatively different approach for extracting light from Si at below-bandgap wavelengths (λ >>1μm) by making use of thermal emission from a bulk material. We also suggest several new optoelectronic devices operating in this unconventional mode.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. K. Malyutenko
Si photonics expands to mid-wave and long-wave infrared: the fundamentals and applications
", Proc. SPIE 9752, Silicon Photonics XI, 97521D (March 14, 2016); doi:10.1117/12.2208125; http://dx.doi.org/10.1117/12.2208125