Paper
16 March 2016 Design space exploration for early identification of yield limiting patterns
Helen Li, Elain Zou, Robben Lee, Sid Hong, Square Liu, JinYan Wang, Chunshan Du, Recco Zhang, Kareem Madkour, Hussein Ali, Danny Hsu, Aliaa Kabeel, Wael ElManhawy, Joe Kwan
Author Affiliations +
Abstract
In order to resolve the causality dilemma of which comes first, accurate design rules or real designs, this paper presents a flow for exploration of the layout design space to early identify problematic patterns that will negatively affect the yield.

A new random layout generating method called Layout Schema Generator (LSG) is reported in this paper, this method generates realistic design-like layouts without any design rule violation. Lithography simulation is then used on the generated layout to discover the potentially problematic patterns (hotspots). These hotspot patterns are further explored by randomly inducing feature and context variations to these identified hotspots through a flow called Hotspot variation Flow (HSV). Simulation is then performed on these expanded set of layout clips to further identify more problematic patterns.

These patterns are then classified into design forbidden patterns that should be included in the design rule checker and legal patterns that need better handling in the RET recipes and processes.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Helen Li, Elain Zou, Robben Lee, Sid Hong, Square Liu, JinYan Wang, Chunshan Du, Recco Zhang, Kareem Madkour, Hussein Ali, Danny Hsu, Aliaa Kabeel, Wael ElManhawy, and Joe Kwan "Design space exploration for early identification of yield limiting patterns", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810W (16 March 2016); https://doi.org/10.1117/12.2218540
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Visualization

Legal

Resolution enhancement technologies

Lithography

Optical lithography

Acquisition tracking and pointing

Double patterning technology

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