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Proceedings Article

Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process

[+] Author Affiliations
Gian Francesco Lorusso, Efrain Altamirano Sanchez

IMEC (Belgium)

Osamu Inoue

Hitachi High-Technology Corp. (Japan)

Takeyoshi Ohashi, Shunsuke Koshihara

Hitachi Ltd. (Japan)

Vassilios Constantoudis

NCSR Demokritos (Greece)

Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780V (March 18, 2016); doi:10.1117/12.2218863
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From Conference Volume 9778

  • Metrology, Inspection, and Process Control for Microlithography XXX
  • Martha I. Sanchez; Vladimir A. Ukraintsev
  • San Jose, California, United States | February 21, 2016

abstract

Line edge roughness (LER) and line width roughness (LWR) are analyzed during pattern transfer in a self-aligned quadruple patterning (SAQP) process. This patterning process leads to a final pitch of 22.5nm, relevant for N7/N5 technologies. Measurements performed by CD SEM (Critical Dimension Scanning Electron Microscope) using different settings in terms of averaging, field of view, and pixel size are compared with reference metrology performed by planar TEM and three-Dimensional Atomic Force Microscope (3D AFM) for each patterning process step in order to investigate the optimal condition for an in-line LWR characterization. Pattern wiggling is als0 quantitatively analyzed during LER/LWR transfer in the SAQP process. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Gian Francesco Lorusso ; Osamu Inoue ; Takeyoshi Ohashi ; Efrain Altamirano Sanchez ; Vassilios Constantoudis, et al.
" Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process ", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780V (March 18, 2016); doi:10.1117/12.2218863; http://dx.doi.org/10.1117/12.2218863


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