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Proceedings Article

EUV progress toward HVM readiness

[+] Author Affiliations
Britt Turkot, Steven L. Carson, Anna Lio, Ted Liang, Mark Phillips, Brian McCool, Eric Stenehjem, Tim Crimmins, Guojing Zhang, Sam Sivakumar

Intel Corp. (United States)

Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977602 (March 18, 2016); doi:10.1117/12.2225014
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From Conference Volume 9776

  • Extreme Ultraviolet (EUV) Lithography VII
  • Eric M. Panning; Kenneth A. Goldberg
  • San Jose, California, United States | February 21, 2016

abstract

This past year has witnessed a sharp increase in EUV lithography progress spanning production tools, source and infrastructure to better position the technology for HVM readiness. While the exposure source remains the largest contributor to downtime and availability, significant strides in demonstrated source power have bolstered confidence in the viability of EUVL for insertion into HVM production. The ongoing development of an EUV pellicle solution alleviates industry concern about one significant source of line-yield risk. In addition to continued expected improvements in EUV source power and availability, the ability to deliver predictable yield remains an ultimate gate to HVM insertion. Ensuring predictable yield requires significant emphasis on reticles. This includes continued pellicle development to enable the readiness and supply of a robust pellicle solution in advance of 250W source power, as well as improvements in mask blank defectivity and techniques to detect and mitigate reticle blank and pattern defects. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Britt Turkot ; Steven L. Carson ; Anna Lio ; Ted Liang ; Mark Phillips, et al.
" EUV progress toward HVM readiness ", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977602 (March 18, 2016); doi:10.1117/12.2225014; http://dx.doi.org/10.1117/12.2225014


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