Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

EUV lithography performance for manufacturing: status and outlook

[+] Author Affiliations
Alberto Pirati, Rudy Peeters, Daniel Smith, Sjoerd Lok, Martijn van Noordenburg, Roderik van Es, Eric Verhoeven, Henk Meijer, Arthur Minnaert, Jan-Willem van der Horst, Hans Meiling, Joerg Mallmann, Christian Wagner, Judon Stoeldraijer, Geert Fisser, Jo Finders, Carmen Zoldesi, Uwe Stamm, Herman Boom

ASML Netherlands B.V. (Netherlands)

David Brandt, Daniel Brown, Igor Fomenkov, Michael Purvis

ASML Netherlands B.V. (United States)

Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760A (March 18, 2016); doi:10.1117/12.2220423
Text Size: A A A
From Conference Volume 9776

  • Extreme Ultraviolet (EUV) Lithography VII
  • Eric M. Panning; Kenneth A. Goldberg
  • San Jose, California, United States | February 21, 2016

abstract

NXE:3300B scanners have been operational at customer sites since almost two years, and the NXE:3350B, the 4th generation EUV system, has started shipping at the end of 2015. All these exposure tools operate using MOPA pre-pulse source technology, which enabled significant productivity scaling, demonstrated at customers and at ASML. Having achieved the required throughput to support device development, the main priority of the ASML EUV program has shifted towards improving stability and availability. Continuous progresses in defectivity reduction and in the realization of a reticle pellicle are taking place at increased speed. Today’s overlay and imaging results are in line with the requirements of 7nm logic devices; Matched Machine overlay to ArF immersion below 2.5 nm and full wafer CDU performance of less than 1.0nm are regularly achieved. The realization of an intensity loss-less illuminator and improvements in resist formulation are significant progress towards enabling the use of EUV technology for 5nm logic devices at full productivity. This paper will present an overview of the status of the ASML EUV program and product roadmap by reviewing the current performance and on-going developments in productivity, imaging, overlay and mask defectivity reduction. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Alberto Pirati ; Rudy Peeters ; Daniel Smith ; Sjoerd Lok ; Martijn van Noordenburg, et al.
" EUV lithography performance for manufacturing: status and outlook ", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760A (March 18, 2016); doi:10.1117/12.2220423; http://dx.doi.org/10.1117/12.2220423


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement


 

  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.