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Proceedings Article

Demonstration of an N7 integrated fab process for metal oxide EUV photoresist

[+] Author Affiliations
Danilo De Simone, Ming Mao, Frederic Lazzarino, Geert Vandenberghe

IMEC (Belgium)

Michael Kocsis, Peter De Schepper, Jason Stowers, Stephen Meyers, Benjamin L. Clark, Andrew Grenville

Inpria Corp. (United States)

Vinh Luong

TEL Technology Ctr., America, LLC (United States)

Fumiko Yamashita

Tokyo Electron Miyagi Ltd. (Japan)

Doni Parnell

TEL Technology Ctr., America (United States)

Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760B (March 18, 2016); doi:10.1117/12.2220051
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From Conference Volume 9776

  • Extreme Ultraviolet (EUV) Lithography VII
  • Eric M. Panning; Kenneth A. Goldberg
  • San Jose, California, United States | February 21, 2016

abstract

Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Danilo De Simone ; Ming Mao ; Michael Kocsis ; Peter De Schepper ; Frederic Lazzarino, et al.
" Demonstration of an N7 integrated fab process for metal oxide EUV photoresist ", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760B (March 18, 2016); doi:10.1117/12.2220051; http://dx.doi.org/10.1117/12.2220051


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