Free electron lasers for 13nm EUV lithography: RF design strategies to minimise investment and operational costs

Simon Keens; Bernhard Rossa; Marcel Frei

doi:10.1117/12.2218966

18 March 2016 Free electron lasers for 13nm EUV lithography: RF design strategies to minimise investment and operational costs

Simon Keens, Bernhard Rossa, Marcel Frei

Author Affiliations +

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97760T (2016) https://doi.org/10.1117/12.2218966
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

As the semiconductor industry proceeds to develop ever better sources of extreme ultraviolet (EUV) light for photolithography applications, two distinct technologies have come to prominence: Tin-plasma and free electron laser (FEL) sources. Tin plasma sources have been in development within the industry for many years, and have been widely reported. Meanwhile, FELs represent the most promising alternative to create high power EUV frequencies and, while tin-plasma source development has been ongoing, such lasers have been continuously developed by academic institutions for use in fundamental research programmes in conjunction with universities and national scientific institutions. This paper follows developments in the field of academic FELs, and presents information regarding novel technologies, specifically in the area of RF design strategy, that may be incorporated into future industrial FEL systems for EUV lithography in order to minimize the necessary investment and operational costs. It goes on to try to assess the cost-benefit of an alternate RF design strategy, based upon previous studies.

Citation Download Citation

Simon Keens, Bernhard Rossa, and Marcel Frei "Free electron lasers for 13nm EUV lithography: RF design strategies to minimise investment and operational costs", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760T (18 March 2016); https://doi.org/10.1117/12.2218966

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