EUV resists: What's next?

Anna Lio

doi:10.1117/12.2225017

18 March 2016 EUV resists: What's next?

Anna Lio

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97760V (2016) https://doi.org/10.1117/12.2225017
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The need to print smaller features and tighter pitches drives the development of new photolithography technologies. Extreme Ultraviolet Lithography (EUVL) at 13.5 nm wavelength is expected to provide considerable resolution gain over the current technology based on 193 nm wavelength. In this paper we assess the current status of EUV photoresists and their readiness for EUVL insertion into High Volume Manufacturing (HVM). In addition, we discuss the requirements that EUV photoresists will need to satisfy in the near and long term future.

Citation Download Citation

Anna Lio "EUV resists: What's next?", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760V (18 March 2016); https://doi.org/10.1117/12.2225017

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