Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

Ryoichi Hirano; Susumu Iida; Tsuyoshi Amano; Hidehiro Watanabe; Masahiro Hatakeyama; Takeshi Murakami; Kenichi Suematsu; Kenji Terao

doi:10.1117/12.2218763

18 March 2016 Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation

Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenichi Suematsu, Kenji Terao

Author Affiliations +

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97761E (2016) https://doi.org/10.1117/12.2218763
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Novel projection electron microscope optics have been developed and integrated into a new inspection system named EBEYE-V30 (“Model EBEYE” is an EBARA’s model code) , and the resulting system shows promise for application to half-pitch (hp) 16-nm node extreme ultraviolet lithography (EUVL) patterned mask inspection. To improve the system’s inspection throughput for 11-nm hp generation defect detection, a new electron-sensitive area image sensor with a high-speed data processing unit, a bright and stable electron source, and an image capture area deflector that operates simultaneously with the mask scanning motion have been developed. A learning system has been used for the mask inspection tool to meet the requirements of hp 11-nm node EUV patterned mask inspection. Defects are identified by the projection electron microscope system using the “defectivity” from the characteristics of the acquired image. The learning system has been developed to reduce the labor and costs associated with adjustment of the detection capability to cope with newly-defined mask defects. We describe the integration of the developed elements into the inspection tool and the verification of the designed specification. We have also verified the effectiveness of the learning system, which shows enhanced detection capability for the hp 11-nm node.

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Ryoichi Hirano, Susumu Iida, Tsuyoshi Amano, Hidehiro Watanabe, Masahiro Hatakeyama, Takeshi Murakami, Kenichi Suematsu, and Kenji Terao "Extreme ultraviolet patterned mask inspection performance of advanced projection electron microscope system for 11nm half-pitch generation", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761E (18 March 2016); https://doi.org/10.1117/12.2218763

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KEYWORDS

Image sensors

Defect detection

Inspection

Photomasks

Extreme ultraviolet lithography

Image processing

Extreme ultraviolet

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