Paper
25 March 2016 Challenges in LER/CDU metrology in DSA: placement error and cross-line correlations
Vassilios Constantoudis, Vijaya-Kumar Murugesan Kuppuswamy, Evangelos Gogolides, Alessandro Vaglio Pret, Hari Pathangi, Roel Gronheid
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Abstract
DSA lithography poses new challenges in LER/LWR metrology due to its self-organized and pitch-based nature. To cope with these challenges, a novel characterization approach with new metrics and updating the older ones is required. To this end, we focus on two specific challenges of DSA line patterns: a) the large correlations between the left and right edges of a line (line wiggling, rms(LWR)<rms(LER)) and b) the cross-line correlations, i.e. the resemblance of wiggling fluctuations of nearby lines. The first is quantified by the Line Center Roughness whose low-frequency part is related to the local placement errors of device structures. For the second, we propose the c-factor correlation function which quantifies the strength of the correlations between lines versus their horizontal distance in pitches. Also, we define roughness and uniformity parameters for the pitch changes along and across lines. The proposed characterization approach is applied to the analysis of line/space patterns obtained with the Liu-Nealey (LiNe) flow (post PMMA removal and pattern transfer) revealing the effects of pattern transfer on roughness and uniformity. Finally, we calculate the cfactor function of various Next-Generation Lithography techniques and reveal their distinct footprint on the extent of cross-line correlations.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vassilios Constantoudis, Vijaya-Kumar Murugesan Kuppuswamy, Evangelos Gogolides, Alessandro Vaglio Pret, Hari Pathangi, and Roel Gronheid "Challenges in LER/CDU metrology in DSA: placement error and cross-line correlations", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97781X (25 March 2016); https://doi.org/10.1117/12.2230849
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Cited by 1 scholarly publication.
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KEYWORDS
Line edge roughness

Line width roughness

Lithography

Metrology

Silicon

Neodymium

Picosecond phenomena

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