High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

HsinYu Tsai; Hiroyuki Miyazoe; Ankit Vora; Teddie Magbitang; Noel Arellano; Chi-Chun Liu; Michael J. Maher; William J. Durand; Simon J. Dawes; James J. Bucchignano; Lynne Gignac; Daniel P. Sanders; Eric A. Joseph; Matthew E. Colburn; C. Grant Willson; Christopher J. Ellison; Michael A. Guillorn

doi:10.1117/12.2219544

25 March 2016 High chi block copolymer DSA to improve pattern quality for FinFET device fabrication

HsinYu Tsai, Hiroyuki Miyazoe, Ankit Vora, Teddie Magbitang, Noel Arellano, Chi-Chun Liu, Michael J. Maher, William J. Durand, Simon J. Dawes, James J. Bucchignano, Lynne Gignac, Daniel P. Sanders, Eric A. Joseph, Matthew E. Colburn, C. Grant Willson, Christopher J. Ellison, Michael A. Guillorn

Author Affiliations +

Proceedings Volume 9779, Advances in Patterning Materials and Processes XXXIII; 977910 (2016) https://doi.org/10.1117/12.2219544
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.

Citation Download Citation

HsinYu Tsai, Hiroyuki Miyazoe, Ankit Vora, Teddie Magbitang, Noel Arellano, Chi-Chun Liu, Michael J. Maher, William J. Durand, Simon J. Dawes, James J. Bucchignano, Lynne Gignac, Daniel P. Sanders, Eric A. Joseph, Matthew E. Colburn, C. Grant Willson, Christopher J. Ellison, and Michael A. Guillorn "High chi block copolymer DSA to improve pattern quality for FinFET device fabrication", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 977910 (25 March 2016); https://doi.org/10.1117/12.2219544

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