Cooperative promotion of plasma instabilities for emission of terahertz radiation in an asymmetric dual-grating-gate graphene-channel FET

Akira Satou; Yuki Koseki; Takayuki Watanabe; Vyacheslav V. Popov; Victor Ryzhii; Taiichi Otsuji

doi:10.1117/12.2227438

29 April 2016 Cooperative promotion of plasma instabilities for emission of terahertz radiation in an asymmetric dual-grating-gate graphene-channel FET

Akira Satou, Yuki Koseki, Takayuki Watanabe, Vyacheslav V. Popov, Victor Ryzhii, Taiichi Otsuji

Author Affiliations +

Proceedings Volume 9856, Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense; 98560F (2016) https://doi.org/10.1117/12.2227438
Event: SPIE Commercial + Scientific Sensing and Imaging, 2016, Baltimore, MD, United States

Abstract

We study instability of plasmons in a dual-grating-gate graphene field-effect transistor induced by dc current injection using self-consistent simulations with the Boltzmann equation. With ultimately high-quality graphene where the electron scattering is only limited by acoustic phonons, it is demonstrated that a total growth rate of the plasmon instability, with the terahertz/mid-infrared range of the frequency, can exceed 4 X 10¹² s^-1 at room temperature, which is an order of magnitude larger than in two-dimensional electron gases based on usual semiconductors. We show that the giant total growth rate originates from cooperative promotion of the so-called Dyakonov-Shur and Ryzhii-Satou-Shur instabilities.

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Akira Satou, Yuki Koseki, Takayuki Watanabe, Vyacheslav V. Popov, Victor Ryzhii, and Taiichi Otsuji "Cooperative promotion of plasma instabilities for emission of terahertz radiation in an asymmetric dual-grating-gate graphene-channel FET", Proc. SPIE 9856, Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense, 98560F (29 April 2016); https://doi.org/10.1117/12.2227438

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