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20 May 2016 Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice
Chuan Jin, Qingqing Xu, Chengzhang Yu, Jianxin Chen
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Proceedings Volume 9819, Infrared Technology and Applications XLII; 98190B (2016) https://doi.org/10.1117/12.2229020
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States
Abstract
In this paper, our recent study on InGaAs/GaAsSb Type II photodetector for extended short wavelength infrared detection is reported. The high quality InGaAs/GaAsSb superlattices (SLs) was grown successfully by molecular beam epitaxy. The full width of half maximum of the SLs peak is 39”. Its optical properties were characterized by photoluminescence (PL) at different temperature. The dependences of peak energy on temperature were measured and analyzed. The photodetector with InGaAs/GaAsSb absorption regions has a Quantum Efficiency (QE) product of 12.51% at 2.1um and the 100% cutoff wavelength is at 2.5um, at 300K under zero bias. The dominant mechanism of the dark current is discussed.
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Chuan Jin, Qingqing Xu, Chengzhang Yu, and Jianxin Chen "Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice", Proc. SPIE 9819, Infrared Technology and Applications XLII, 98190B (20 May 2016); https://doi.org/10.1117/12.2229020
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KEYWORDS
Laser sintering
Quantum efficiency
Short wave infrared radiation
Short wave infrared radiation
Photodetectors
Photodetectors
Superlattices
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