Long wavelength infrared photodetector using submonolayer quantum dots

Jun Oh Kim; Zahyun Ku; Augustine Urbas; Sang-Woo Kang; Sang Jun Lee

doi:10.1117/12.2223569

20 May 2016 Long wavelength infrared photodetector using submonolayer quantum dots

Jun Oh Kim, Zahyun Ku, Augustine Urbas, Sang-Woo Kang, Sang Jun Lee

Proceedings Volume 9819, Infrared Technology and Applications XLII; 98191B (2016) https://doi.org/10.1117/12.2223569
Event: SPIE Defense + Security, 2016, Baltimore, MD, United States

Abstract

We report on InAs SML QD infrared photodetector performance for long wavelength infrared detection. The device structure consists of InAs SML QDs embedded in InxGa1-xAs quantum well (QW) surrounded by GaAs and AlxGa1- xAs barrier. In order to investigate the structural properties of SML QDs, we took cross-sectional STEM images. We have measured the polarization dependent spectral response of SML-QD based photodetector using various angular inplane and out-plane polarizations. We also report a systematic approach for controlling the intersubband transition energy level in SML QD infrared photodetectors, in order to control the peak wavelength of the device.

Citation Download Citation

Jun Oh Kim, Zahyun Ku, Augustine Urbas, Sang-Woo Kang, and Sang Jun Lee "Long wavelength infrared photodetector using submonolayer quantum dots", Proc. SPIE 9819, Infrared Technology and Applications XLII, 98191B (20 May 2016); https://doi.org/10.1117/12.2223569

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