New high performance Si for optical devices

T. Tenma; M. Matsuzaka; R. Sako; K. Takase; K. Chiba

doi:10.1117/12.2239234

26 May 2016 New high performance Si for optical devices

T. Tenma, M. Matsuzaka, R. Sako, K. Takase, K. Chiba

Proceedings Volume 9854, Image Sensing Technologies: Materials, Devices, Systems, and Applications III; 985416 (2016) https://doi.org/10.1117/12.2239234
Event: SPIE Commercial + Scientific Sensing and Imaging, 2016, Baltimore, MD, United States

Abstract

Against the backdrop of a growing demand in the areas of smart buildings, security, vehicle installation, and other applications, the market for far infrared cameras is expected to grow significantly in the future. However, since germanium (Ge) and chalcogenide glass, which have been used as the lens materials of far infrared cameras, are very expensive or highly toxic, there are some problems supporting the growing demand. We have therefore focused attention on silicon, which is inexpensive and less toxic. Although silicon has been used as a lens material of far infrared cameras, there are some problems remaining to be solved: Cz silicon is inexpensive but delivers low transmittance, and Fz silicon delivers sufficient transmittance but is expensive. We have developed New Cz silicon, which delivers high transmittance as Fz silicon does, and is inexpensive as conventional Cz silicon is. We have already started its sample work at both companies in Japan and overseas and have obtained excellent performance results. Mass production is scheduled to start in this fiscal year.

Citation Download Citation

T. Tenma, M. Matsuzaka, R. Sako, K. Takase, and K. Chiba "New high performance Si for optical devices", Proc. SPIE 9854, Image Sensing Technologies: Materials, Devices, Systems, and Applications III, 985416 (26 May 2016); https://doi.org/10.1117/12.2239234

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