Electric field biased Faraday Effect in Cr-doped BiFeO3 thin film

Brandon D. Young; Ruyan Guo; Amar S. Bhalla

doi:10.1117/12.2249421

7 September 2016 Electric field biased Faraday Effect in Cr-doped BiFeO₃ thin film

Brandon D. Young, Ruyan Guo, Amar S. Bhalla

Proceedings Volume 9958, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications X; 99581D (2016) https://doi.org/10.1117/12.2249421
Event: SPIE Optical Engineering + Applications, 2016, San Diego, California, United States

Abstract

Multiferroics, materials which possess multiple ferroic orders, have seen a revival of interest in recent years as the need for multifunctional and multitunable devices has increased. These particular materials are of interest due to the potential to control and tune devices by both electric and magnetic fields. Examining how an external electric field alters the magneto-optic response of the well-known multiferroic, BiFeO₃ (BFO), could provide useful insight into how these multiferroics would function in optical devices. The Faraday rotation of a 10% Cr-doped BFO (111) thin film on an MgO substrate was measured for three conditions using an ac magnetic field technique: no biasing electric field, a positive 2 kV/m electric field, and a negative 2 kV/m electric field. The Verdet constant for these three conditions at an optical wavelength of 632.8 nm was 20.48 ± 1.96 °/kOe-cm, 21.25 ± 3.33 °/kOe-cm, and 2.01 ± 0.5 °/kOe-cm respectively. These results demonstrate the possibility to manipulate the magneto-optic response of the thin film with an external dc electric field. Future work to both overcome the deficiencies exhibited by BFO and investigate how precisely the magneto-optic response can be controlled by an external field is presented and discussed.

Citation Download Citation

Brandon D. Young, Ruyan Guo, and Amar S. Bhalla "Electric field biased Faraday Effect in Cr-doped BiFeO₃ thin film", Proc. SPIE 9958, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications X, 99581D (7 September 2016); https://doi.org/10.1117/12.2249421

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KEYWORDS

Ferroelectric materials

Magnetism

Thin films

Magneto-optics

Absorption

Electro optics

Garnet

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