Presentation + Paper
26 September 2016 Terahertz conductivity of ultra high electron concentration 2DEGs in NTO/STO heterostructures
Sara Arezoomandan, Hugo O. Condori Quispe, Ashish Chanana, Peng Xu, Ajay Nahata, Bharat Jalan, Berardi Sensale-Rodriguez
Author Affiliations +
Abstract
We analyze the terahertz properties of complex oxide hetero-structures with record-high carrier concentration approaching 1015 cm-2. Our results evidence a large room temperature terahertz conductivity, which corresponds to 3X to 6X larger mobility than what is extracted from electrical measurements. That is, in spite of a relatively lower mobility, when taking into account its ultra-large carrier concentration, the 2DEG in complex oxide hetero-structures can still attain a large terahertz conductivity, which is comparable with that in traditional high-mobility semiconductors or large-area CVVD graphene films. Moreover, we also discuss the perspectives off these hetero-structures for terahertz and high frequency electronic applications.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sara Arezoomandan, Hugo O. Condori Quispe, Ashish Chanana, Peng Xu, Ajay Nahata, Bharat Jalan, and Berardi Sensale-Rodriguez "Terahertz conductivity of ultra high electron concentration 2DEGs in NTO/STO heterostructures", Proc. SPIE 9934, Terahertz Emitters, Receivers, and Applications VII, 99340N (26 September 2016); https://doi.org/10.1117/12.2238026
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KEYWORDS
Terahertz radiation

Graphene

Spectroscopy

Interfaces

Crystals

Modulators

Oxides

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