Correction of placement error in EBL using model based method

Sergey Babin; Sergey Borisov; Vladimir Militsin; Tadashi Komagata; Tetsuro Wakatsuki

doi:10.1117/12.2256908

4 October 2016 Correction of placement error in EBL using model based method

Sergey Babin, Sergey Borisov, Vladimir Militsin, Tadashi Komagata, Tetsuro Wakatsuki

Proceedings Volume 9985, Photomask Technology 2016; 998513 (2016) https://doi.org/10.1117/12.2256908
Event: SPIE Photomask Technology, 2016, San Jose, California, United States

Abstract

The main source of placement error in maskmaking using electron beam is charging. DISPLACE software provides a method to correct placement errors for any layout, based on a physical model. The charge of a photomask and multiple discharge mechanisms are simulated to find the charge distribution over the mask. The beam deflection is calculated for each location on the mask, creating data for the placement correction. The software considers the mask layout, EBL system setup, resist, and writing order, as well as other factors such as fogging and proximity effects correction. The output of the software is the data for placement correction. Unknown physical parameters such as fogging can be found from calibration experiments. A test layout on a single calibration mask was used to calibrate physical parameters used in the correction model. The extracted model parameters were used to verify the correction. As an ultimate test for the correction, a sophisticated layout was used for verification that was very different from the calibration mask. The placement correction results were predicted by DISPLACE, and the mask was fabricated and measured. A good correlation of the measured and predicted values of the correction all over the mask with the complex pattern confirmed the high accuracy of the charging placement error correction.

Citation Download Citation

Sergey Babin, Sergey Borisov, Vladimir Militsin, Tadashi Komagata, and Tetsuro Wakatsuki "Correction of placement error in EBL using model based method", Proc. SPIE 9985, Photomask Technology 2016, 998513 (4 October 2016); https://doi.org/10.1117/12.2256908

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