Formation of recessed hole by NF3/O2 etching for phase change memory

Zhen Xu; Bo Liu; Dan Gao; Heng Wang; Yangyang Xia; Zhitang Song; Lei Wang; Yipeng Zhan; Songlin Feng

doi:10.1117/12.2246305

12 October 2016 Formation of recessed hole by NF₃/O₂ etching for phase change memory

Zhen Xu, Bo Liu, Dan Gao, Heng Wang, Yangyang Xia, Zhitang Song, Lei Wang, Yipeng Zhan, Songlin Feng

Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180O (2016) https://doi.org/10.1117/12.2246305
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China

Abstract

In this work, we discuss about the formation of recessed hole in the manufacturing process of phase change memory (PCM). Three recessed holes with different slope angle and depth were obtained by changing the NF₃/O₂ gas mixing ratio. The recessed holes upon bottom electrode contact (BEC) were achieved by etch back process after the formation of BEC. The etching process takes advantage of the etch rate of TiN which is faster than that of SiN. With increasing content of O₂ gas, the decrease in the etch rate of SiN was larger than that of TiN, and this increases the selectivity of TiN to SiN. Oxidation layer can be found upon the SiN layer in the energy dispersive X-ray (EDX) elemental mapping profile after the recessed etching step. It is the existence of oxidation layer that suppressed the etching of SiN.

Citation Download Citation

Zhen Xu, Bo Liu, Dan Gao, Heng Wang, Yangyang Xia, Zhitang Song, Lei Wang, Yipeng Zhan, and Songlin Feng "Formation of recessed hole by NF₃/O₂ etching for phase change memory", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180O (12 October 2016); https://doi.org/10.1117/12.2246305

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