Paper
20 October 2016 Improving contact layer patterning using SEM contour based etch model
François Weisbuch, Andrey Lutich, Jirka Schatz, Tino Hertzsch, Hans-Peter Moll
Author Affiliations +
Proceedings Volume 10032, 32nd European Mask and Lithography Conference; 1003202 (2016) https://doi.org/10.1117/12.2248013
Event: 32nd European Mask and Lithography Conference, 2016, Dresden, Germany
Abstract
The patterning of the contact layer is modulated by strong etch effects that are highly dependent on the geometry of the contacts. Such litho-etch biases need to be corrected to ensure a good pattern fidelity. But aggressive designs contain complex shapes that can hardly be compensated with etch bias table and are difficult to characterize with standard CD metrology. In this work we propose to implement a model based etch compensation method able to deal with any contact configuration. With the help of SEM contours, it was possible to get reliable 2D measurements particularly helpful to calibrate the etch model. The selections of calibration structures was optimized in combination with model form to achieve an overall errRMS of 3nm allowing the implementation of the model in production.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
François Weisbuch, Andrey Lutich, Jirka Schatz, Tino Hertzsch, and Hans-Peter Moll "Improving contact layer patterning using SEM contour based etch model", Proc. SPIE 10032, 32nd European Mask and Lithography Conference, 1003202 (20 October 2016); https://doi.org/10.1117/12.2248013
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Cited by 2 scholarly publications.
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KEYWORDS
Etching

Calibration

Scanning electron microscopy

Optical proximity correction

Data modeling

Optical lithography

Lithography

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