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Proceedings Article

Silicon photonics process development based on a 200-mm CMOS platform

[+] Author Affiliations
Zhihua Li, Jiang Yan, Bo Tang, Guilei Wang, Lingkuan Meng, Daoqun Liu

Institute of Microelectronics (China)

Proc. SPIE 10027, Nanophotonics and Micro/Nano Optics III, 1002706 (October 31, 2016); doi:10.1117/12.2245513
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From Conference Volume 10027

  • Nanophotonics and Micro/Nano Optics III
  • Zhiping Zhou; Kazumi Wada
  • Beijing, China | October 12, 2016

abstract

In this paper, the process difference between Si photonics and Si CMOS is discussed. Firstly, the substrate of Si photonics and the issues about electronic-photonic integration are commented . Lithography, etching and hydrogen annealing are then discussed in detail. Line edge roughness is thought to be the original source of scattering loss of waveguide. Hydrogen annealing is effective to reduce the sidewall roughness but has the risky of changing the profile of waveguide. Ion implantation and metallization for active photonics components can be easily transferred from the CMOS process recipes. Ge photodetector fabrication is challenging though it shares the same epitaxy equipment with the CMOS platform. Finally, a whole Si photonics process flow including passive and active components based on our 200 mm CMOS platform is presented. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Zhihua Li ; Jiang Yan ; Bo Tang ; Guilei Wang ; Lingkuan Meng, et al.
" Silicon photonics process development based on a 200-mm CMOS platform ", Proc. SPIE 10027, Nanophotonics and Micro/Nano Optics III, 1002706 (October 31, 2016); doi:10.1117/12.2245513; http://dx.doi.org/10.1117/12.2245513


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