Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network
(Conference Presentation)

Duanjun Cai; Huachun Wang; Youyang Huang; Chenping Wu; Xiaohong Chen; Na Gao; Tongbo T. Wei; Junxi Wang; Shuping Li; Junyong Kang

doi:10.1117/12.2236776

3 November 2016 Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)

Duanjun Cai, Huachun Wang, Youyang Huang, Chenping Wu, Xiaohong Chen, Na Gao, Tongbo T. Wei, Junxi Wang, Shuping Li, Junyong Kang

Author Affiliations +

Proceedings Volume 9926, UV and Higher Energy Photonics: From Materials to Applications; 99260D (2016) https://doi.org/10.1117/12.2236776
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

Metal nanowire networks hold a great promise, which have been supposed the only alternative to ITO as transparent electrodes for their excellent performance in touch screen, LED and solar cell. It is well known that the difficulty in making transparent ohmic electrode to p-type high-Al-content AlGaN conducting layer has highly constrained the further development of UV LEDs. On the IWN-2014, we reported the ohmic contact to n, p-GaN with direct graphene 3D-coated Cu nanosilk network and the fabrication of complete blue LED. On the ICNS-2015, we reported the ohmic contact to n-type AlGaN conducting layer with Cu@alloy nanosilk network. Here, we further demonstrate the latest results that a novel technique is proposed for fabricating transparent ohmic electrode to high-Al-content AlGaN p-type conducting layer in UV LEDs using Cu@alloy core-shell nanosilk network. The superfine copper nanowires (16 nm) was synthesized for coating various metals such as Ni, Zn, V or Ti with different work functions. The transmittance showed a high transparency (> 90%) over a broad wavelength range from 200 to 3000 nm. By thermal annealing, ohmic contact was achieved on p-type Al0.5Ga0.5N layer with Cu@Ni nanosilk network, showing clearly linear I-V curve. By skipping the p-type GaN cladding layer, complete UV LED chip was fabricated and successfully lit with bright emission at 276 nm.

Conference Presentation

Citation Download Citation

Duanjun Cai, Huachun Wang, Youyang Huang, Chenping Wu, Xiaohong Chen, Na Gao, Tongbo T. Wei, Junxi Wang, Shuping Li, and Junyong Kang "Completely transparent ohmic electrode on p-type AlGaN for UV LEDs with core-shell Cu@alloy nanosilk network (Conference Presentation)", Proc. SPIE 9926, UV and Higher Energy Photonics: From Materials to Applications, 99260D (3 November 2016); https://doi.org/10.1117/12.2236776

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KEYWORDS

Electrodes

Ultraviolet light emitting diodes

Copper

Metals

Nanowires

Blue light emitting diodes

Graphene

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