High performance 808 nm GaAsP/InGaP quantum well lasers

H. Martin Hu; Bocang Qiu; Weimin Wang; Chunyu Miao; James Ho; Wenbin Liu; Chengpeng Li

doi:10.1117/12.2247781

9 November 2016 High performance 808 nm GaAsP/InGaP quantum well lasers

H. Martin Hu, Bocang Qiu, Weimin Wang, Chunyu Miao, James Ho, Wenbin Liu, Chengpeng Li

Proceedings Volume 10017, Semiconductor Lasers and Applications VII; 100170M (2016) https://doi.org/10.1117/12.2247781
Event: SPIE/COS Photonics Asia, 2016, Beijing, China

Abstract

We report on our design and fabrication of very high power semiconductor lasers based on a core-aluminum-free (CAF) active structure. The optical power of as high as 45 W, limited by the thermal roll-over, has been obtained when the single emitter devices are tested under quasi-continuous wave (QCW) conditions, and more than 10 W has been acquired at the operation current of 10 A under continuous wave (CW) conditions. For 10 mm long bar chips, emitting power of up to 200 W is attainable for the operation current of 200 A. The lasers also exhibit excellent slope efficiency of about 1.3 W/A and beam divergence of only 25 °.

Citation Download Citation

H. Martin Hu, Bocang Qiu, Weimin Wang, Chunyu Miao, James Ho, Wenbin Liu, and Chengpeng Li "High performance 808 nm GaAsP/InGaP quantum well lasers", Proc. SPIE 10017, Semiconductor Lasers and Applications VII, 100170M (9 November 2016); https://doi.org/10.1117/12.2247781

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